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TE and TM material gains as a function of Al-content for 3 nm QW with AlN barriers for and , with the emission wavelengths at .
The schematics and the valence band structures of (a) conventional 30 Å QW and (b) 30 Å GaN QW with AlN barriers.
(a) TE and TM gain spectra for 30 Å GaN QW and (b) TE gain spectra for both 30 Å GaN QW and conventional QW with AlN barriers.
(a) TE optical gain for 30 Å GaN QW at and (b) TE material gain as a function of carrier density for 30 Å GaN QW, 30 Å GaN QW , and 30 Å QW .
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