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Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes
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1.
1.R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 46, L761 (2007).
http://dx.doi.org/10.1143/JJAP.46.L761
2.
2.M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 (2007).
http://dx.doi.org/10.1063/1.2800290
3.
3.H. Zhao, J. Zhang, G. Liu, and Tansu Appl. Phys. Lett. 98, 151115 (2011).
http://dx.doi.org/10.1063/1.3580628
4.
4.Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, IEEE J. Sel. Top. Quantum Electron. 15, 1218 (2009).
http://dx.doi.org/10.1109/JSTQE.2009.2015580
5.
5.Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, IEEE J. Sel. Top. Quantum Electron. 15, 1066 (2009).
http://dx.doi.org/10.1109/JSTQE.2009.2017208
6.
6.S. H. Park, D. Ahn, B. H. Koo, and J. W. Kim, Appl. Phys. Lett. 95, 063507 (2009).
http://dx.doi.org/10.1063/1.3205127
7.
7.C. T. Liao, M. C. Tsai, B. T. Liou, S. H. Yen, and Y. K. Kuo, J. Appl. Phys.40, 301 (2008).
8.
8.H. Zhao, G. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, Appl. Phys. Lett. 95, 061104 (2009).
http://dx.doi.org/10.1063/1.3204446
9.
9.H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, IET Optoelectron. 3, 283 (2009).
http://dx.doi.org/10.1049/iet-opt.2009.0050
10.
10.Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, Opt. Express 17, 13747 (2009).
http://dx.doi.org/10.1364/OE.17.013747
11.
11.H. Zhao, G. Liu, R. A. Arif, and N. Tansu, Solid-State Electron. 54, 1119 (2010).
http://dx.doi.org/10.1016/j.sse.2010.05.019
12.
12.U. K. Mishra, P. Parikh, and Y. F. Wu, Proc. IEEE 90, 1022 (2002).
http://dx.doi.org/10.1109/JPROC.2002.1021567
13.
13.B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, and G. Pomrenke, Appl. Phys. Lett. 92, 042112 (2008).
http://dx.doi.org/10.1063/1.2839309
14.
14.H. Tong, J. Zhang, G. Liu, J. A. Herbsommer, G. S. Huang, and N. Tansu, Appl. Phys. Lett. 97, 112105 (2010).
http://dx.doi.org/10.1063/1.3489086
15.
15.J. Zhang, H. Tong, G. Y. Liu, J. A. Herbsommer, G. S. Huang, and N. Tansu, J. Appl. Phys. 109, 053706 (2011).
http://dx.doi.org/10.1063/1.3553880
16.
16.M. Jamil, H. Zhao, J. Higgins, and N. Tansu, Phys. Status Solidi A 205, 2886 (2008).
http://dx.doi.org/10.1002/pssa.200824136
17.
17.G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, IEEE J. Sel. Top. Quantum Electron. 17, 48 (2011).
http://dx.doi.org/10.1109/JSTQE.2010.2049343
18.
18.A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, and M. Razeghi, Appl. Phys. Lett. 83, 4701 (2003).
http://dx.doi.org/10.1063/1.1633019
19.
19.A. J. Fischer, A. A. Allerman, M. H. Crawford, K. H. A. Bogart, S. R. Lee, R. J. Kaplar, W. W. Chow, S. R. Kurtz, K. W. Fullmer, and J. J. Figiel, Appl. Phys. Lett. 84, 3394 (2004).
http://dx.doi.org/10.1063/1.1728307
20.
20.V. Adivarahan, S. Wu, J. P. Zhang, A. Chitnis, M. Shatalov, V. Mandavilli, R. Gaska, and M. A. Khan, Appl. Phys. Lett. 84, 4762 (2004).
http://dx.doi.org/10.1063/1.1756202
21.
21.Z. Ren, Q. Sun, S. Y. Kwon, J. Han, K. Davitt, Y. K. Song, A. V. Nurmikko, H. K. Cho, W. Liu, J. A. Smart, and L. J. Schowalter, Appl. Phys. Lett. 91, 051116 (2007).
http://dx.doi.org/10.1063/1.2766841
22.
22.A. V. Sampath, M. L. Reed, C. Chua, G. A. Garrett, G. Dang, E. D. Readinger, H. Shen, A. Usikov, O. Kovalenkov, L. Shapovalova, V. A. Dmitriev, N. M. Johnson, and M. Wraback, Phys. Status Solidi C 5, 2303 (2008).
http://dx.doi.org/10.1002/pssc.200778717
23.
23.C. G. Moe, M. L. Reed, G. A. Garrett, A. V. Sampath, T. Alexander, H. Shen, M. Wraback, Y. Bilenko, M. Shatalov, J. Yang, W. Sun, J. Deng, and R. Gaska, Appl. Phys. Lett. 96, 213512 (2010).
http://dx.doi.org/10.1063/1.3435485
24.
24.Y. Sakai, Y. Zhu, S. Sumiya, M. Miyoshi, M. Tanaka, and T. Egawa, Jpn. J. Appl. Phys. 49, 022102 (2010).
http://dx.doi.org/10.1143/JJAP.49.022102
25.
25.Y. Taniyasu and M. Kasu, Appl. Phys. Lett. 96, 221110 (2010).
http://dx.doi.org/10.1063/1.3446834
26.
26.H. Hirayama, N. Noguchi, and N. Kamata, Appl. Phys. Express 3, 032102 (2010).
http://dx.doi.org/10.1143/APEX.3.032102
27.
27.T. Takano, Y. Narita, A. Horiuchi, and H. Kawanishi, Appl. Phys. Lett. 84, 3567 (2004).
http://dx.doi.org/10.1063/1.1737061
28.
28.M. Kneissl, Z. Yang, M. Teepe, C. Knollenberg, O. Schmidt, P. Kiesel, N. M. Johnson, S. Schujman, and L. J. Schowalter, J. Appl. Phys. 101, 123103 (2007).
http://dx.doi.org/10.1063/1.2747546
29.
29.V. N. Jmerik, A. M. Mizerov, A. A. Sitnikova, P. S. Kop’ev, S. V. Ivanov, E. V. Lutsenko, N. P. Tarasuk, N. V. Rzheutskii, and G. P. Yablonskii, Appl. Phys. Lett. 96, 141112 (2010).
http://dx.doi.org/10.1063/1.3373834
30.
30.H. Yoshida, M. Kuwabara, Y. Yamashita, K. Uchiyama, and H. Kan, Appl. Phys. Lett. 96, 211122 (2010).
http://dx.doi.org/10.1063/1.3442918
31.
31.H. Yoshida, M. Kuwabara, Y. Yamashita, Y. Takagi, K. Uchiyama, and H. Kan, N. J. Phys. 11, 125013 (2009).
http://dx.doi.org/10.1088/1367-2630/11/12/125013
32.
32.M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, and N. M. Johnson, Appl. Phys. Lett. 82, 2386 (2003).
http://dx.doi.org/10.1063/1.1535266
33.
33.C. Chen, M. Shatalov, E. Kuokstis, V. Adivarahan, M. Gaevski, S. Rai, and M. Asif Khan, Jpn. J. Appl. Phys., Part 2 43, L1099 (2004).
http://dx.doi.org/10.1143/JJAP.43.L1099
34.
34.J. Zhang, H. Zhao, and N. Tansu, Appl. Phys. Lett. 97, 111105 (2010).
http://dx.doi.org/10.1063/1.3488825
35.
35.T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, Appl. Phys. Lett. 97, 171105 (2010).
http://dx.doi.org/10.1063/1.3506585
36.
36.W. W. Chow, M. Kneissl, J. E. Northrup, and N. M. Johnson, Appl. Phys. Lett. 90, 101116 (2007).
http://dx.doi.org/10.1063/1.2679969
37.
37.W. W. Chow and M. Kneissl, J. Appl. Phys. 98, 114502 (2005).
http://dx.doi.org/10.1063/1.2128495
38.
38.S. H. Park and S. L. Chuang, Appl. Phys. A: Mater. Sci. Process. 78, 107 (2004).
http://dx.doi.org/10.1007/s00339-002-1910-x
39.
39.S. H. Park, Semicond. Sci. Technol. 24, 035002 (2009).
http://dx.doi.org/10.1088/0268-1242/24/3/035002
40.
40.S. L. Chuang, IEEE J. Quantum Electron. 32, 1791 (1996).
http://dx.doi.org/10.1109/3.538786
41.
41.S. L. Chuang and C. S. Chang, Semicond. Sci. Technol. 12, 252 (1997).
http://dx.doi.org/10.1088/0268-1242/12/3/004
42.
42.S. L. Chuang, Physics of Photonic Devices, 2nd ed. (Wiley, New York, 2009), Chap. 4.
43.
43.H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, IEEE J. Quantum Electron. 45, 66 (2009).
http://dx.doi.org/10.1109/JQE.2008.2004000
44.
44.H. Zhao and N. Tansu, J. Appl. Phys. 107, 113110 (2010).
http://dx.doi.org/10.1063/1.3407564
45.
45.I. Vurgaftman and J. R. Meyer, in Nitride Semiconductor Devices, edited by J. Piprek (Wiley, New York, 2007), Chap. 2.
46.
46.I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
http://dx.doi.org/10.1063/1.1600519
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/content/aip/journal/apl/98/17/10.1063/1.3583442
2011-04-28
2015-04-19

Abstract

The gain characteristics of high Al-content AlGaN-delta-GaN quantum wells(QWs) are investigated for mid- and deep-ultraviolet (UV) lasers. The insertion of an ultrathin GaN layer in high Al-content AlGaNQWs leads to valence subbands rearrangement, which in turn results in large optical gain for mid- and deep-UV lasers.

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Scitation: Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/17/10.1063/1.3583442
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