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Saturable absorbing dynamics of GaInN multiquantum well structures
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10.1063/1.3583456
/content/aip/journal/apl/98/17/10.1063/1.3583456
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/17/10.1063/1.3583456
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of GaN-based BS laser diode with anti-reflection coating facets.

Image of FIG. 2.
FIG. 2.

(a) Input pulse energy dependence of the absorption coefficient of SA section at 405 nm when the applied reverse-bias voltage to the SA section was varied. The saturation energy is indicated by the arrow. (b) The reverse-bias dependence of the saturation energy at 405 nm.

Image of FIG. 3.
FIG. 3.

(a) Change in transmitted probe pulse intensity after the absorption was saturated by pump pulses. (b) The reverse-bias dependence of the decay time.

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/content/aip/journal/apl/98/17/10.1063/1.3583456
2011-04-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Saturable absorbing dynamics of GaInN multiquantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/17/10.1063/1.3583456
10.1063/1.3583456
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