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Crystallized HfLaO embedded tetragonal for dynamic random access memory capacitor dielectrics
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View: Figures


Image of FIG. 1.
FIG. 1.

Current vs voltage curves of capacitors with three different dielectrics, which are , HfLaO, and bilayer structure. All of three dielectrics have similar EOT of . The inset shows the energy band diagram of bilayer. The J-V curve of bilayer structure under negative bias follows the J-V curve of HfLaO and that under positive bias does that of , implying that the current conduction is controlled by hole injection rather than electron injection.

Image of FIG. 2.
FIG. 2.

Current vs voltage curves of three different capacitors: , , and . When barrier is added at the top of stack, the current under is more reduced than that under . When barrier is added again at the bottom as well, the change in current is observed only under the negative bias. This can only be explained by the hole injection controlled mechanism.

Image of FIG. 3.
FIG. 3.

EOT and trend as a function of ALD cycles of HfLaO embedded in . The inset shows the K-value dependence on ALD cycles of HfLaO embedded in .

Image of FIG. 4.
FIG. 4.

Change in the K value, EOT, and leakage current density at for the different position of HfLaO in . When HfLaO is embedded at a lower part of (denoted as b-HfLaO), the K value of the total stack is higher. HfLaO embedded at a lower part of has lower EOT and leakage current than HfLaO embedded at a center of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystallized HfLaO embedded tetragonal ZrO2 for dynamic random access memory capacitor dielectrics