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High resolution study of the strong diamond/silicon nitride interface
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10.1063/1.3584019
/content/aip/journal/apl/98/17/10.1063/1.3584019
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/17/10.1063/1.3584019
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Figures

Image of FIG. 1.
FIG. 1.

High-angle annular dark-field STEM image of the diamond/ interface. Large prismatic grains are seen in the ceramic side, surrounded by bright zones corresponding to the yttrium-rich glassy intergranular layer. Near the interface, randomly-oriented diamond crystals are seen, some of them already present a columnar morphology with lengths up to almost , while others are much smaller and equiaxed, of a few tens of nanometers in diameter.

Image of FIG. 2.
FIG. 2.

HRTEM and STEM-EELS analysis of the of the diamond/ interface showing the formation of a DLC interlayer, as assigned by and broad peak transitions in the EELS spectra. The negligible peak in the diamond nanocrystal is a good quality sign. Diamond {111} lattice planes are identifiable in the nanocrystal, the distance between two successive fringes being approximately 0.205 nm.

Image of FIG. 3.
FIG. 3.

(a) HRTEM micrograph of the diamond/ interface denoting regions of diamond direct nucleation on the grains, besides DLC coated interfaces. In the diamond/ grain-to-grain contact, the [111]Dia direction is almost parallel to one. In the bulk diamond, two nanodiamond crystallite orientations are depicted. (b) High angular annular dark-field (HAADF) STEM image of the interface -DLC; the bright spots represent the real Si atom projections at the [001] zone axis.

Image of FIG. 4.
FIG. 4.

Schematic diagrams of the diamond/ interface obtained from the CRYSTALKIT software. Projections along (a) the [001] zone axis with respect to the crystal; (b) the [210] zone axis; (c) the [010] zone axis. The rectangular inset in Fig. 4(a) highlights the superimposition of (111)Dia and planes, showing that 42 carbon atoms of a (111) plane correspond to six silicon atoms of a plane, denoting a 7:1 match arrangement.

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/content/aip/journal/apl/98/17/10.1063/1.3584019
2011-04-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High resolution study of the strong diamond/silicon nitride interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/17/10.1063/1.3584019
10.1063/1.3584019
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