banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High resolution study of the strong diamond/silicon nitride interface
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

High-angle annular dark-field STEM image of the diamond/ interface. Large prismatic grains are seen in the ceramic side, surrounded by bright zones corresponding to the yttrium-rich glassy intergranular layer. Near the interface, randomly-oriented diamond crystals are seen, some of them already present a columnar morphology with lengths up to almost , while others are much smaller and equiaxed, of a few tens of nanometers in diameter.

Image of FIG. 2.
FIG. 2.

HRTEM and STEM-EELS analysis of the of the diamond/ interface showing the formation of a DLC interlayer, as assigned by and broad peak transitions in the EELS spectra. The negligible peak in the diamond nanocrystal is a good quality sign. Diamond {111} lattice planes are identifiable in the nanocrystal, the distance between two successive fringes being approximately 0.205 nm.

Image of FIG. 3.
FIG. 3.

(a) HRTEM micrograph of the diamond/ interface denoting regions of diamond direct nucleation on the grains, besides DLC coated interfaces. In the diamond/ grain-to-grain contact, the [111]Dia direction is almost parallel to one. In the bulk diamond, two nanodiamond crystallite orientations are depicted. (b) High angular annular dark-field (HAADF) STEM image of the interface -DLC; the bright spots represent the real Si atom projections at the [001] zone axis.

Image of FIG. 4.
FIG. 4.

Schematic diagrams of the diamond/ interface obtained from the CRYSTALKIT software. Projections along (a) the [001] zone axis with respect to the crystal; (b) the [210] zone axis; (c) the [010] zone axis. The rectangular inset in Fig. 4(a) highlights the superimposition of (111)Dia and planes, showing that 42 carbon atoms of a (111) plane correspond to six silicon atoms of a plane, denoting a 7:1 match arrangement.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High resolution study of the strong diamond/silicon nitride interface