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Comparison between chemical vapor deposited and physical vapor deposited metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
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10.1063/1.3584024
/content/aip/journal/apl/98/18/10.1063/1.3584024
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/18/10.1063/1.3584024
/content/aip/journal/apl/98/18/10.1063/1.3584024
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/content/aip/journal/apl/98/18/10.1063/1.3584024
2011-05-03
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/18/10.1063/1.3584024
10.1063/1.3584024
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