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Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics
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10.1063/1.3584856
/content/aip/journal/apl/98/18/10.1063/1.3584856
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/18/10.1063/1.3584856
/content/aip/journal/apl/98/18/10.1063/1.3584856
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/content/aip/journal/apl/98/18/10.1063/1.3584856
2011-05-02
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Local stress induced by diamond-like carbon liner in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors and impact on electrical characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/18/10.1063/1.3584856
10.1063/1.3584856
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