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Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Cross-sectional HAADF-STEM image of GaInN/GaN MQWs at and near a V-shaped pit. Nine bright stripes are GaInN layers. The V-shaped pit is initiated from the TD indicated by the black arrow. (b) Atomic resolution HAADF-STEM image of one of the QW layers of flat region in (a). (c) HAADF-STEM image taken from the slope region in (a). Faint inclined bright lines were observed along the pit slope. (d) Magnified image of the dotted rectangular region in (c) at an atomic resolution. (e) Intensity profile of HAADF-STEM image contrast taken from dashed-dotted lined rectangular region in (b) and (d).

Image of FIG. 2.
FIG. 2.

Atom probe tomography of In (violet), Ga (yellow), and Ni (green) atoms at and near a V-shaped pit. The blue cylindrical region is in the vicinity of center of the V-shaped pit. The green cylindrical region is from the slope region of the fourth quantum well from the bottom. In the red cylindrical region, three quantum wells from the bottom are in flat.

Image of FIG. 3.
FIG. 3.

One-dimensional In concentration profile from (a) the red cylindrical region, (b) the green cylindrical region, and (c) the blue cylindrical region in Fig. 2.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits