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Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness
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10.1063/1.3586250
/content/aip/journal/apl/98/18/10.1063/1.3586250
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/18/10.1063/1.3586250

Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction pattern and (b) high-resolution cross-sectional TEM image of LSMO/SNTO heterostructures with a film thickness of 258 u. c.

Image of FIG. 2.
FIG. 2.

(a) Photovoltage of LSMO/SNTO heterojunctions fabricated at an oxygen pressure of (a1), and LSMO/Si heterojunctions fabricated at oxygen pressures of (a2) and (a3). (b) Thickness dependence of peak values of photovoltages of LSMO/SNTO heterojunctions fabricated at an oxygen pressure of (b1), and LSMO/Si heterojunctions fabricated at oxygen pressures of (b2) and (b3). (c) Band diagrams of LSMO/SNTO heterojunctions fabricated at an oxygen pressure of (c1), and LSMO/Si heterojunctions fabricated at oxygen pressures of (c2) and (c3). The yellow shadow and vertical dash line denotes the calculated depletion layer in LSMO films and the interface of these heterojunctions, respectively.

Tables

Generic image for table
Table I.

The parameters used in our calculation (Refs. 9 and 11–13).

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/content/aip/journal/apl/98/18/10.1063/1.3586250
2011-05-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/18/10.1063/1.3586250
10.1063/1.3586250
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