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Highly -doped epitaxial graphene obtained by fluorine intercalation
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View: Figures


Image of FIG. 1.
FIG. 1.

Experimental constant energy cut at the Fermi energy (a, b, and c) and valence band map (d, e, and f) from (a and d) buffer layer, (b and e) graphene prepared by interaction of fluorine with the buffer layer, and (c and f) graphene on buffer layer. The -doped character of the fluorine intercalated sample is evident.

Image of FIG. 2.
FIG. 2.

XPS data taken using 350 eV photons of the buffer layer before (upper panels) and after (lower panels) fluorination. In each case the thick solid (red and blue) lines represent the experimental data while the dashed and thin solid (black) line represent the fit. (a) core levels are fitted to two spin-orbit-split doublet peaks, representing the bulk (SiC) and surface contributions (Ref. 23). Fluorine bonding to interfacial Si is indicated by a shift in the surface doublet, , of −0.18 eV after fluorination. (b) core levels before fluorination consist of a bulk (SiC) peak and two surface peaks representing buffer layer C atoms bonded to the substrate (Ref. 17). After fluorination, the latter peaks are weakened, and a new graphene-derived peak is observed. No C–F bonds are observed.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly p-doped epitaxial graphene obtained by fluorine intercalation