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In-depth resolved Raman scattering analysis for the identification of secondary phases: Characterization of layers for solar cell applications
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10.1063/1.3587614
/content/aip/journal/apl/98/18/10.1063/1.3587614
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/18/10.1063/1.3587614
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra measured at different depths from the CZTS layer using a 532.5 nm excitation wavelength: surface (0 min sputter time), 250 nm (5 min sputter time), 500 nm (10 min sputter time), 750 nm (15 min sputter time), 1000 nm (20 min sputter time), 1250 nm (25 min sputter time), and 1500 nm (30 min sputter time). In this and the following figure the spectra measured at different depths are vertically shifted, and the intensity of the spectra is normalized to that of the peak at about .

Image of FIG. 2.
FIG. 2.

Raman spectra measured at different depths from the CZTS layer using a 325 nm excitation wavelength: surface (0 min sputter time), 250 nm (5 min sputter time), 500 nm (10 min sputter time), 750 nm (15 min sputter time), 1000 nm (20 min sputter time), 1250 nm (25 min sputter time), and 1500 nm (30 min sputter time). Inset in the figure shows the spectrum measured in the spectral region after 25 min sputtering. This spectrum is characterized by the presence of a peak at about , corresponding to the second order band of ZnS, in addition to the main first order ZnS mode at .

Image of FIG. 3.
FIG. 3.

In-depth elemental AES composition profiles from the CZTS layer.

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/content/aip/journal/apl/98/18/10.1063/1.3587614
2011-05-05
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In-depth resolved Raman scattering analysis for the identification of secondary phases: Characterization of Cu2ZnSnS4 layers for solar cell applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/18/10.1063/1.3587614
10.1063/1.3587614
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