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Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition
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10.1063/1.3589120
/content/aip/journal/apl/98/19/10.1063/1.3589120
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/19/10.1063/1.3589120
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) curves shift under the constant voltage stress of 10 V. (b) The time dependence of under the constant gate biases of 10 and −10 V for at room temperature.

Image of FIG. 2.
FIG. 2.

The time dependence of under dynamic stresses with a duty cycle of 0.5 and a period of 2000 s at room temperature.

Image of FIG. 3.
FIG. 3.

(a) The time dependence of under different stress temperatures. (b) Characteristic trapping time as a function of reciprocal temperature. The inset shows the values of as a function of temperature.

Image of FIG. 4.
FIG. 4.

The time dependence of the under the blue light and a constant voltage stress of −10 V. The inset of Fig. 4 shows the of our graphene FET under red, green and blue laser illumination for at room temperature.

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/content/aip/journal/apl/98/19/10.1063/1.3589120
2011-05-12
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/19/10.1063/1.3589120
10.1063/1.3589120
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