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Layout of a Ti HEB TES integrated with a twin-slot antenna. The inset shows the overlap of the Ti (bottom layer) with the NbTiN contacts.
Transfer function of the FSS filter in comparison with theory of Ref. 13. A noisy bump around 900 GHz is due to a large data error in the vicinity of the FTS beamsplitter node.
Output noise and change in the bias current as functions of radiation power for device no. 1 at . The small output noise for is due to the SQUID only. Here the detector is already saturated by optical signal and is not sensitive.
Phonon noise reduced to the volume of device no. 1. The large devices (see Ref. 16) were Ti films typically 25–40 nm thick deposited on sapphire using either magnetron sputtering or e-beam evaporation and patterned into long (up to 10 cm) meander lines.
Detector parameters and data. [ is the device length, is the device width, is the normal resistance. Electron temperature was calculated from experimental current-voltage characteristics using a heat balance equation. The difference between and becomes significant when . This is largely due to the fact that the superconducting transition widens in magnetic field.]
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