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Copper oxide transistor on copper wire for e-textile
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10.1063/1.3589374
/content/aip/journal/apl/98/19/10.1063/1.3589374
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/19/10.1063/1.3589374
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of transistor on Cu wire. Inner core Cu wire and outer shell film are used for the gate and channel, respectively. Source and drain pads are made by Pt by thermal evaporation, and the source and drain interconnection is made by cross-woven Cu wire.

Image of FIG. 2.
FIG. 2.

X-ray diffraction pattern of pure Cu wire (top) and film (bottom). XRD data clearly show the single phase film.

Image of FIG. 3.
FIG. 3.

Electrical characteristics of transistor. (a) transfer characteristics at and (b) output characteristics for .

Image of FIG. 4.
FIG. 4.

Time dependence of response to the different relative humidity. The measurement bias conditions are and . Wet vapor and dry were alternatively supplied. High humidity increases more current, and this humidity response is reversible.

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/content/aip/journal/apl/98/19/10.1063/1.3589374
2011-05-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Copper oxide transistor on copper wire for e-textile
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/19/10.1063/1.3589374
10.1063/1.3589374
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