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Schematic of transistor on Cu wire. Inner core Cu wire and outer shell film are used for the gate and channel, respectively. Source and drain pads are made by Pt by thermal evaporation, and the source and drain interconnection is made by cross-woven Cu wire.
X-ray diffraction pattern of pure Cu wire (top) and film (bottom). XRD data clearly show the single phase film.
Electrical characteristics of transistor. (a) transfer characteristics at and (b) output characteristics for .
Time dependence of response to the different relative humidity. The measurement bias conditions are and . Wet vapor and dry were alternatively supplied. High humidity increases more current, and this humidity response is reversible.
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