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Electric field penetration in Schottky junctions probed by bias-dependent internal photoemission
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10.1063/1.3589375
/content/aip/journal/apl/98/19/10.1063/1.3589375
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/19/10.1063/1.3589375
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic band diagram of a junction under reverse bias showing (a) electric field penetration and (b) image force barrier lowering. is the gold Fermi level, the conduction band minimum, the built-in potential, and is the SBH variation from the intrinsic SBH .

Image of FIG. 2.
FIG. 2.

(a) characteristics of the Schottky junction with (squares) and without (circles) bismuth surface treatment. characteristics of the bismuth surface treated junction (red triangles). The solid line indicates a linear fit using Eq. (1). (b) Square-root of the photoyield against the incident photon energy near the SBH taken under various applied bias voltages. Solid lines indicate linear extrapolations.

Image of FIG. 3.
FIG. 3.

SBH reduction as a function of the electric field at the interface . The solid line denotes the linear fit to the experimental data. The dotted (blue) line shows the calculated SBH lowering due to field penetration based on the bulk dielectric permittivity. The inset shows as a function of with a fit (solid line) assuming image force barrier reduction.

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/content/aip/journal/apl/98/19/10.1063/1.3589375
2011-05-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric field penetration in Au/Nb:SrTiO3 Schottky junctions probed by bias-dependent internal photoemission
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/19/10.1063/1.3589375
10.1063/1.3589375
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