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AFM images of the uncapped QDs after 10 min annealing at a) 450 and b) .
(a) topographic X-STM image of one complete QWR (marked by the two dashed lines). [(b) and (c)] close ups of the interface fluctuation.
(a) topographic X-STM image of the QD layer. An AlAs rich region emanating from the top of one of the QDs is marked by two lines. (b) topographic image of a typical QD with a smooth and (c) rough bottom AlGaAs/GaAs interface.
(a) topographic X-STM image of a GaAs QD capped with GaAs. The interface is marked by the white transparent line.
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