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Schematics of Si/SiGe heterostructure with the scanning electron microscopic image of antidots patterned on the surface of the heterostructure. Period and radius of the antidots are 600 nm and 120 nm, respectively. Depth profile of antidots shows an etch depth of 44 nm.
Magnetoresistivity trace of 2DEG in the antidot lattice with well-defined symmetric commensurability peaks at 1.4 K. Inset: temperature dependence of 2DEG mobility in the patterned and unpatterned regions of the Hall bar.
Magnetic field dependence of the ratchet photovoltage measured between the contacts A-C under MW illumination for different temperatures. Inset: schematics showing the antidot pattern in hexagonal geometry along with the dimension of the Hall Bar and direction of polarized MW and semidisk axis.
Magnetic field dependence of measured between contacts A-B and C-D at 1.4 K.
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