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High internal and external quantum efficiency InGaN/GaN solar cells
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10.1063/1.3540501
/content/aip/journal/apl/98/2/10.1063/1.3540501
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/2/10.1063/1.3540501

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the InGaN/GaN solar cell structure. AFM scans of the surface of the (b) smoother sample with rms roughness of and (c) rough sample with rms roughness of .

Image of FIG. 2.
FIG. 2.

Measured absorption (solid), average (solid with error bars), maximum and minimum (dashed curves) EQE curves for (a) smoother and (b) rough samples. The average EQE and its standard deviation (error bars) were determined from measurements of a total of 12 devices located in the same area of the sample where the absorption was measured.

Image of FIG. 3.
FIG. 3.

IQE for the smoother (dashed) and rough (solid) surface solar cells, determined from the ratio between the EQE and the light absorption curves.

Image of FIG. 4.
FIG. 4.

Current density vs voltage for solar cells, with rough (solid) and smooth (dashed) surfaces, under 1 sun-AM1.5G conditions.

Tables

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Table I.

Solar cell performance metrics.

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/content/aip/journal/apl/98/2/10.1063/1.3540501
2011-01-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High internal and external quantum efficiency InGaN/GaN solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/2/10.1063/1.3540501
10.1063/1.3540501
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