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The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination
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10.1063/1.3541783
/content/aip/journal/apl/98/2/10.1063/1.3541783
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/2/10.1063/1.3541783
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The variations in transfer curves as a function of the NBITS time for the -HIZO-TFTs with channel width/length (W/L) of (a) 40/7 and (b) . The dependence of (c) the channel length and (d) width on shift under NBITS.

Image of FIG. 2.
FIG. 2.

Schematic cross-sectional view of hole migration at the channel/insulator interface in -HIZO-TFTs with (a) a short channel length and (b) a long channel length. The larger migration of holes in TFT with a shorter channel length induces a larger accumulation of holes in the channel under the source electrode, resulting in more hole trapping in the insulator.

Image of FIG. 3.
FIG. 3.

(a) The simulated potential distribution in the -HIZO-TFT under and calculated by ATLAS. (b) The line profile of potential distributions in the channel layer at the center and at positions away from the source and drain edges.

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/content/aip/journal/apl/98/2/10.1063/1.3541783
2011-01-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effects of device geometry on the negative bias temperature instability of Hf-In-Zn-O thin film transistors under light illumination
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/2/10.1063/1.3541783
10.1063/1.3541783
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