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Normalized XPS spectra of (Ga,Mn)As at low binding energies before (a) and after (b) adsorption of fluorescein.
Effect of fluorescein and its derivatives eosin Y and phloxine B on the electrical properties of sample B in the absence of light. Inset: normalized resistance peaks.
Coercive fields (circles) and (squares) as a function of the angle of the applied magnetic field with respect to the  direction at 2 K for sample B.
Effect of light exposure on functionalized (Ga,Mn)As devices. (a) Normalized resistance peaks in the temperature dependencies of the electrical resistance (inset). (b) Magnetic field dependence of the normalized planar Hall voltage.
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