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Crystalline -gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with as passivation layer
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10.1063/1.3590923
/content/aip/journal/apl/98/20/10.1063/1.3590923
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3590923
/content/aip/journal/apl/98/20/10.1063/1.3590923
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/content/aip/journal/apl/98/20/10.1063/1.3590923
2011-05-16
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3590923
10.1063/1.3590923
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