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Cross-sectional TEM image of ZGZ laminate/ after annealing. The inset shows the XPS and spectrum of ZGZ laminate/ after annealing.
C-V characteristics for ZGZ/ and samples measured at the frequency of 100 KHz. Also shown in the figure are the simulated C-V curves accounting for quantum mechanical confinement.
Conductance curves measured at the frequency of 100 KHz for both ZGZ/ and samples. The inset demonstrates the C-V hysteresis quantified by shift for ±5 V sweeping for both types of samples.
Characteristics of gate leakage current density vs voltage for ZGZ/ and samples. The inset displays gate leakage current density as a function of EOT for Ge MOS devices with different high- gate dielectrics. Data for with EOT of 1.99 nm is obtained from samples with thicker thickness.
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