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Crystalline -gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with as passivation layer
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10.1063/1.3590923
/content/aip/journal/apl/98/20/10.1063/1.3590923
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3590923
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Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of ZGZ laminate/ after annealing. The inset shows the XPS and spectrum of ZGZ laminate/ after annealing.

Image of FIG. 2.
FIG. 2.

C-V characteristics for ZGZ/ and samples measured at the frequency of 100 KHz. Also shown in the figure are the simulated C-V curves accounting for quantum mechanical confinement.

Image of FIG. 3.
FIG. 3.

Conductance curves measured at the frequency of 100 KHz for both ZGZ/ and samples. The inset demonstrates the C-V hysteresis quantified by shift for ±5 V sweeping for both types of samples.

Image of FIG. 4.
FIG. 4.

Characteristics of gate leakage current density vs voltage for ZGZ/ and samples. The inset displays gate leakage current density as a function of EOT for Ge MOS devices with different high- gate dielectrics. Data for with EOT of 1.99 nm is obtained from samples with thicker thickness.

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/content/aip/journal/apl/98/20/10.1063/1.3590923
2011-05-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3590923
10.1063/1.3590923
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