Full text loading...
(a) Transfer characteristics at for BG, TG, and DG modes for a TFT with and . Optical micrograph of a spincoated diF-TESADT TFT is shown in the inset. (b) Transfer characteristics in BG mode for different . Scanning electron microscopy cross section of the DG TFT is shown in the inset.
(a) Linear mobility at as a function of the channel length extracted from BG and TG sweeps measured at 298 K. Mobility was averaged over 8 TFTs for each channel length. Output characteristics for the BG mode for a TFT with and at (b) 298 K and (c) 198 K. Drain sweeps were performed at different gate voltages from 0 V to −20 V in the step of −5 V.
(a) Temperature dependence of mobility for top and bottom channels. Solid lines are fit to the data according to the polaron hopping model described by Eq. (2). (b) Gate field dependence for mobility at different temperatures for top and bottom channels.
, , and at different gate voltages for BG and TG TFTs.
Article metrics loading...