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Charge transport in solution processable polycrystalline dual-gate organic field effect transistors
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10.1063/1.3591969
/content/aip/journal/apl/98/20/10.1063/1.3591969
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3591969

Figures

Image of FIG. 1.
FIG. 1.

(a) Transfer characteristics at for BG, TG, and DG modes for a TFT with and . Optical micrograph of a spincoated diF-TESADT TFT is shown in the inset. (b) Transfer characteristics in BG mode for different . Scanning electron microscopy cross section of the DG TFT is shown in the inset.

Image of FIG. 2.
FIG. 2.

(a) Linear mobility at as a function of the channel length extracted from BG and TG sweeps measured at 298 K. Mobility was averaged over 8 TFTs for each channel length. Output characteristics for the BG mode for a TFT with and at (b) 298 K and (c) 198 K. Drain sweeps were performed at different gate voltages from 0 V to −20 V in the step of −5 V.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of mobility for top and bottom channels. Solid lines are fit to the data according to the polaron hopping model described by Eq. (2). (b) Gate field dependence for mobility at different temperatures for top and bottom channels.

Tables

Generic image for table
Table I.

, , and at different gate voltages for BG and TG TFTs.

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/content/aip/journal/apl/98/20/10.1063/1.3591969
2011-05-19
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge transport in solution processable polycrystalline dual-gate organic field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3591969
10.1063/1.3591969
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