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High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
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10.1063/1.3592569
/content/aip/journal/apl/98/20/10.1063/1.3592569
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3592569

Figures

Image of FIG. 1.
FIG. 1.

The I-V curves of 22, 32, 42, diameter PDs.

Image of FIG. 2.
FIG. 2.

Dark currents of metamorphic-RCE-PDs with different mesa sizes at a reverse bias of 5 V.

Image of FIG. 3.
FIG. 3.

The measured photoresponses of the metamorphic-RCE p-i-n PDs under various reverse biases.

Image of FIG. 4.
FIG. 4.

Measured frequency response of the PD, the 3 dB bandwidth of 13 GHz was achieved.

Tables

Generic image for table
Table I.

The schematic diagram of the PDs.

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/content/aip/journal/apl/98/20/10.1063/1.3592569
2011-05-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3592569
10.1063/1.3592569
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