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Solution processed Ni-doped p-type channel in field effect transistor assembly with thin dielectric layer
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10.1063/1.3592736
/content/aip/journal/apl/98/20/10.1063/1.3592736
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3592736
/content/aip/journal/apl/98/20/10.1063/1.3592736
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/content/aip/journal/apl/98/20/10.1063/1.3592736
2011-05-18
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Solution processed Ni-doped TiO2 p-type channel in field effect transistor assembly with <10 nm thin Ba0.5Sr0.5TiO3 dielectric layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3592736
10.1063/1.3592736
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