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High electron mobility transistors on plastic flexible substrates
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10.1063/1.3593006
/content/aip/journal/apl/98/20/10.1063/1.3593006
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3593006
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of InP-based MODFET epitaxial layers.

Image of FIG. 2.
FIG. 2.

Process flow for device onto flexible substrate.

Image of FIG. 3.
FIG. 3.

(a) Optical and [(b)–(d)] Nomarski contrast microscope images at various magnification of transferred HEMTs.

Image of FIG. 4.
FIG. 4.

Typical I-V characteristic of a flexible MODFET.

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/content/aip/journal/apl/98/20/10.1063/1.3593006
2011-05-19
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High electron mobility transistors on plastic flexible substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/20/10.1063/1.3593006
10.1063/1.3593006
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