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Room-temperature PL spectra of AlGaN and InAlGaN single heteroepitaxial layers. Inset in Fig. 1 shows surface morphology AFM over of AlGaN (RMS: 0.813 nm) and InAlGaN (RMS: 0.595 nm) layer with thickness about 50 nm.
(a) XRD curves in the (002) reflections of InGaN/AlGaN and InGaN/InAlGaN MQW. Cross-sectional TEM images of (b) InGaN/AlGaN and (c) InGaN/InAlGaN MQW. The diffraction condition is .
(a) L-I-V curves of the LEDs with AlGaN (dash) and InAlGaN (solid) barrier. (b) Normalized efficiency curves of experimental (open circles) and simulated (solid lines). Inset in Fig. 3(a) shows the mesa-type UV chip.
Distribution of (a) electron, (b) hole concentrations, and (c) radiative recombination rates concentrations of the LEDs with AlGaN and InAlGaN barrier under a high forward current density of .
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