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Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
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10.1063/1.3591967
/content/aip/journal/apl/98/21/10.1063/1.3591967
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/21/10.1063/1.3591967
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room-temperature PL spectra of AlGaN and InAlGaN single heteroepitaxial layers. Inset in Fig. 1 shows surface morphology AFM over of AlGaN (RMS: 0.813 nm) and InAlGaN (RMS: 0.595 nm) layer with thickness about 50 nm.

Image of FIG. 2.
FIG. 2.

(a) XRD curves in the (002) reflections of InGaN/AlGaN and InGaN/InAlGaN MQW. Cross-sectional TEM images of (b) InGaN/AlGaN and (c) InGaN/InAlGaN MQW. The diffraction condition is .

Image of FIG. 3.
FIG. 3.

(a) L-I-V curves of the LEDs with AlGaN (dash) and InAlGaN (solid) barrier. (b) Normalized efficiency curves of experimental (open circles) and simulated (solid lines). Inset in Fig. 3(a) shows the mesa-type UV chip.

Image of FIG. 4.
FIG. 4.

Distribution of (a) electron, (b) hole concentrations, and (c) radiative recombination rates concentrations of the LEDs with AlGaN and InAlGaN barrier under a high forward current density of .

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/content/aip/journal/apl/98/21/10.1063/1.3591967
2011-05-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/21/10.1063/1.3591967
10.1063/1.3591967
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