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XRD pattern of 0.5LFO-BIT (c), 1.0LFO-BIT (a), and 1.5LFO-BIT (b) films grown on STO substrates. The peaks indicated by dash lines come from STO substrates.
(a)–(c) are the HRTEM images of 0.5LFO-BIT, 1.0LFO-BIT, and 1.5LFO-BIT films, respectively. 3, 4, and 5 represent the numbers of oxygen octahedra along the films growth direction.
(a) Shows the dependence of magnetization on temperature of 0.5LFO-BIT, 1.0LFO-BIT, and 1.5LFO-BIT films, respectively. Red-square curves were measured under FC condition while black-triangle ones under ZFC condition. Figure 3(b) is the magnetic hysteresis loops of these films measured at 10 K. Figure 3(c) is the hysteresis loops of 0.5LFO-BIT and 1.5LFO-BIT films measured at room temperature.
(a)–(c) are the crystal structures of 0.5LFO-BIT, 1.0LFO-BIT, and 1.5LFO-BIT projected to plane, respectively. Letters a and b in Fig. 4(a) represent the two nonequivalent oxygen octahedra. A LFO-perovskite block is inserted to the top half-unit-cell of BIT in Fig. 4(a).
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