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SEM images of the presented samples: (a) reference structure with metallized graphene pads but the Hall bar is left out, (b) sample with width 1000 nm prior to measurement, (c) immediately before complete breakdown, and (d) after avalanche-like destruction.
(a) Charge carrier density and (b) Hall mobility as a function of the previously seen current density for three different samples with different channel widths between 500 and 2000 nm. A clear enhancement in mobility can be seen in this CA regime. Inset: low bias characteristics of sample A2000 [symbols correspond to the respective symbols in (a) and (b)].
Conductivity plotted as a function of for different samples. (a) measurement while maximal current is flowing. The temperatures rise well beyond . Inset: self-amplifying breakdown. (b) measurement after cooling to room temperature.
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