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Generation of high spatial frequency ripples on silicon under ultrashort laser pulses irradiation
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10.1063/1.3593493
/content/aip/journal/apl/98/21/10.1063/1.3593493
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/21/10.1063/1.3593493

Figures

Image of FIG. 1.
FIG. 1.

SEM images of a groove performed in silicon at 850 nm and filled with HSFL. (a) gives a view of the groove, (b) shows details of the HSFL, and (c) is the 2D-FT of image (b).

Image of FIG. 2.
FIG. 2.

Evolution of the refractive index as a function of the carrier density at laser wavelengths of 700, 750, 800, 850, 900, and 950 nm.

Image of FIG. 3.
FIG. 3.

Comparison of experimental data and the SHG theoretical model of HSFL spacing as a function of the wavelength. The experimental data clearly follows the model of fs laser excited silicon refractive indices .

Tables

Generic image for table
Table I.

Summary of optical and physical data as a function of the wavelength. : classical nonexcited refractive index of silicon, : linear absorption coefficient, : surface reflectivity, : carrier density under fs irradiation [calculated from Eq. (6)], and : modified refractive index of silicon as calculated by the Drude model [Eq. (5)].

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/content/aip/journal/apl/98/21/10.1063/1.3593493
2011-05-23
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Generation of high spatial frequency ripples on silicon under ultrashort laser pulses irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/21/10.1063/1.3593493
10.1063/1.3593493
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