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Neutron doping effects in epitaxially laterally overgrown n-GaN
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10.1063/1.3593957
/content/aip/journal/apl/98/21/10.1063/1.3593957
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/21/10.1063/1.3593957
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature concentration profiles calculated from 1 kHz C-V measurements for undoped ELOG structure before irradiation and after irradiation with thermal neutron fluence of and annealing at .

Image of FIG. 2.
FIG. 2.

EBIC image of ELOG GaN sample before irradiation; accelerating voltage 10 kV, the full size of the figure .

Image of FIG. 3.
FIG. 3.

EBIC image of ELOG GaN sample after irradiation with reactor neutrons and annealing to ; accelerating voltage 10 kV, the full size of the figure .

Image of FIG. 4.
FIG. 4.

Admittance spectra C-T, for irradiated and annealed ELOG sample; C is capacitance, T-temperature, G is ac conductance, is the circular frequency, f is the measurement frequency (the data are shown for frequencies , 0.2, 0.3, 0.5, 1, 2, 3, 5, 10, 20, 30, 50, 100, 200, 300, 500, and 1000 kHz.

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/content/aip/journal/apl/98/21/10.1063/1.3593957
2011-05-24
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Neutron doping effects in epitaxially laterally overgrown n-GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/21/10.1063/1.3593957
10.1063/1.3593957
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