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Schematic illustrations for (a) the stacking structure of the thin film and (b) the Hall device together with the measurement circuit. (c) A polar magneto-optical Kerr loop (a solid line) and an in-plane magnetization curve (a broken line) for the FePt thin film with the thickness of 1.5 nm. (d) The current as a function of applied voltage for the Al–O layer prepared using an ALD system.
(a) Hall resistance vs perpendicular magnetic field for at , 0, and −13 V. For clarity, the loops for and −13 V are shifted vertically. (b) The resistance change vs at (open circles) and −13 V (solid circles), where the contributions of OHE in the system and the background offset were subtracted from the AHE loops.
The change in the coercivity for the device with as a function of electric field at the MgO layer. Solid circles denote the data for the device with a 5-nm-thick MgO layer. For comparison, the data for the device without a MgO layer are also shown by open circles. The inset in the figure is the polar MOKE loop for the FePt layer without MgO.
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