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Coercivity change in an FePt thin layer in a Hall device by voltage application
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic illustrations for (a) the stacking structure of the thin film and (b) the Hall device together with the measurement circuit. (c) A polar magneto-optical Kerr loop (a solid line) and an in-plane magnetization curve (a broken line) for the FePt thin film with the thickness of 1.5 nm. (d) The current as a function of applied voltage for the Al–O layer prepared using an ALD system.

Image of FIG. 2.
FIG. 2.

(a) Hall resistance vs perpendicular magnetic field for at , 0, and −13 V. For clarity, the loops for and −13 V are shifted vertically. (b) The resistance change vs at (open circles) and −13 V (solid circles), where the contributions of OHE in the system and the background offset were subtracted from the AHE loops.

Image of FIG. 3.
FIG. 3.

The change in the coercivity for the device with as a function of electric field at the MgO layer. Solid circles denote the data for the device with a 5-nm-thick MgO layer. For comparison, the data for the device without a MgO layer are also shown by open circles. The inset in the figure is the polar MOKE loop for the FePt layer without MgO.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coercivity change in an FePt thin layer in a Hall device by voltage application