Thermal conductivity as a metric for the crystalline quality of epitaxial layers
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Thermal conductivity STO epitaxial layers. The solid line is data for bulk STO from Ref. 19. (a) Thermal conductivity of MBE grown films. (b) The notation “-CER” indicates that the samples were grown using ceramic STO as the laser target. Thermal conductivity of PLD grown films. Representative error bars are shown for (a) MBE-1 and (b) PLD-1 samples. Uncertainties in the other data points are comparable to these representative error bars at corresponding temperatures.
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Comparison between changes in the out-of-plane lattice parameter of homoepitaxial PLD films grown on STO substrates with changes in thermal conductivity. (a) Representative high resolution XRD data of STO films grown on STO substrates. Curves are offset from each other vertically for clarity. PLD-3-850 and PLD-3-0.4 indicate STO films grown using a single crystalline target at 850 or substrate temperature, respectively. PLD-3-CER-0.4 is a STO film grown using a sintered pressed ceramic target, substrate temperature of , and deposition laser fluence of . (b) Correlation between the thermal resistivity at room temperature of STO films grown by PLD and the change in the out-of-plane lattice constant of the film relative to the substrate. The error bars on the filled circle show the variations in thermal conductivity and lattice constant of as-received samples and samples annealed for 1, 4, and 16 h in 1 atm .
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