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Dislocation cross-slip in GaN single crystals under nanoindentation
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10.1063/1.3593381
/content/aip/journal/apl/98/22/10.1063/1.3593381
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3593381
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical continuous load-penetration curves of GaN. The maximum depth is 500 nm. The pop-in event is denoted by an arrow. Inset: load–penetration curve for a maximum load of 25 mN.

Image of FIG. 2.
FIG. 2.

Room-temperature panchromatic CL images of an indent in c-plane GaN: (a) maximum load 125 mN; (b) maximum load 285 mN; (c) 125 mN indent annealing at for 60 min; (d) maximum load 25 mN; (e) sketch of dislocation loops emerging at the free surface. The inset in (a) shows a SEM image of the indentation.

Image of FIG. 3.
FIG. 3.

Room temperature panchromatic CL images of a 285 mN indent in c-plane GaN: (a) a cross-sectional sample cleaved to the {11–20} plane, the inset shows a magnification view of the inclined slips (the magnification region is denoted by a white dashed rectangle frame); (b) a cross-sectional sample after annealing at for 60 min. The white dashed arcs in both pictures mark the residual footprint of the indentation.

Image of FIG. 4.
FIG. 4.

[(a)–(d)] Slip systems in a hexagonal lattice under indentation. Dashed lines denote the {11–20} planes. The slip planes are as indicated (see Ref. 15). [(e)–(i)] Mechanism of dislocations cross-slip multiplication and movement.

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/content/aip/journal/apl/98/22/10.1063/1.3593381
2011-06-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation cross-slip in GaN single crystals under nanoindentation
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3593381
10.1063/1.3593381
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