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Robust surface electronic properties of topological insulators: films grown by molecular beam epitaxy
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10.1063/1.3595309
/content/aip/journal/apl/98/22/10.1063/1.3595309
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3595309
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Auger spectra showing progress in cleaning of the sample. Each cleaning cycle consisted of 1 min 500 eV Ar-ion sputtering and 5 min annealing at . LEED pattern after two cleaning cycles is also shown.

Image of FIG. 2.
FIG. 2.

[(a)–(e)] Selected ARPES maps measured along the using He I radiation at 140 K in the course of cleaning the same film several times. (a) 16 (≈16 nm), (b) 11, (c) 6, (d) 3.5, and (e) 1 QL. Bulk conduction band (BCB), surface state band (SB) and bulk valence band (BVB) are indicated in panel (a). Dashed line in bottom [(a)–(c)] panels indicate the unchanged binding energy position of the most pronounced bulk feature. The accuracy of thickness values is ±0.5 QL (±0.5 nm) to account for small instabilities of the sputter gun ion flux and a slightly nonuniform thickness profile. The color scale saturation is separately adjusted in the top and bottom panels. (f) Fermi surface and the three-dimensional band structure illustration of the 3.5 QL film measured at 15 K. (g) Schematic theoretical dispersion as predicted by Zhang et al., Ref. 12. (h) 11 QL spectrum along taken with Kr (10.03 eV) excitation.

Image of FIG. 3.
FIG. 3.

ARPES maps along measured at 90 K. (a) and (c) Film thickness is 10 QL, (b) and (d) Film thickness is 8.8 QL. [(a) and (b)] He I excitation, [(c) and (d)] Kr excitation. The binding energy shift of the significant part of the spectral weight between panels (c) and (d) is indicated by arrows.

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/content/aip/journal/apl/98/22/10.1063/1.3595309
2011-06-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3595309
10.1063/1.3595309
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