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RHEED patterns with incident electron beams along and azimuths, respectively, obtained from Si surface (a); after Be deposition at (b); after exposure of Be layer to oxygen radicals at for 3 min (c); and after MgZnO epitaxial growth at for 3 h (d); and AFM image of the wurtzite MgZnO epilayer in a scanning area (e).
Cross-sectional HRTEM micrograph along direction near the interface region, whose FFT pattern is included as an inset (a); and the corresponding FFT patterns obtained from the different layers (b).
XRD scan of wurtzite MgZnO (002) plane (a); and -scan of wurtzite MgZnO (101) plane (b).
The current-voltage characteristic of the photodetector based on n-MgZnO (0001)/p-Si (111) heterostructure. The inset provides the detailed device structure of the photodetector (a); photoresponse spectrum of the photodetector based on the n-MgZnO (0001)/p-Si (111) heterojunction at 0.5 V bias. The inset is the reflectance spectrum of the corresponding sample measured at room temperature and the black arrow indicates the band gap position (b).
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