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Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
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10.1063/1.3595342
/content/aip/journal/apl/98/22/10.1063/1.3595342
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3595342
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Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns with incident electron beams along and azimuths, respectively, obtained from Si surface (a); after Be deposition at (b); after exposure of Be layer to oxygen radicals at for 3 min (c); and after MgZnO epitaxial growth at for 3 h (d); and AFM image of the wurtzite MgZnO epilayer in a scanning area (e).

Image of FIG. 2.
FIG. 2.

Cross-sectional HRTEM micrograph along direction near the interface region, whose FFT pattern is included as an inset (a); and the corresponding FFT patterns obtained from the different layers (b).

Image of FIG. 3.
FIG. 3.

XRD scan of wurtzite MgZnO (002) plane (a); and -scan of wurtzite MgZnO (101) plane (b).

Image of FIG. 4.
FIG. 4.

The current-voltage characteristic of the photodetector based on n-MgZnO (0001)/p-Si (111) heterostructure. The inset provides the detailed device structure of the photodetector (a); photoresponse spectrum of the photodetector based on the n-MgZnO (0001)/p-Si (111) heterojunction at 0.5 V bias. The inset is the reflectance spectrum of the corresponding sample measured at room temperature and the black arrow indicates the band gap position (b).

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/content/aip/journal/apl/98/22/10.1063/1.3595342
2011-05-31
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3595342
10.1063/1.3595342
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