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Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate
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10.1063/1.3595943
/content/aip/journal/apl/98/22/10.1063/1.3595943
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3595943
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM top view in a area showing the surface morphology of SiN/AlN/GaN grown on Si substrate; the schematic cross section of the structure appears in the inset.

Image of FIG. 2.
FIG. 2.

Room temperature 2DEG carrier density measured by Van Der Pauw method of SiN/AlN/GaN, lattice matched , and heterostructures as a function of the barrier layer thickness.

Image of FIG. 3.
FIG. 3.

Carrier density profile of AlN/GaN-on Si HEMT structure. The inset shows the first 10 nm of the carrier profile indicating a sharp carrier confinement and high polarization at the AlN/GaN interface.

Image of FIG. 4.
FIG. 4.

circular diode characteristic of 3 nm barrier thickness AlN/GaN-on Si HEMT structure revealing a low leakage current up to 200 V reverse bias.

Image of FIG. 5.
FIG. 5.

Transfer characteristics of the SiN/AlN/GaN HEMT on silicon substrate, demonstrating a record extrinsic transconductance of GaN-on-Si HEMTs.

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/content/aip/journal/apl/98/22/10.1063/1.3595943
2011-05-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3595943
10.1063/1.3595943
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