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AFM top view in a area showing the surface morphology of SiN/AlN/GaN grown on Si substrate; the schematic cross section of the structure appears in the inset.
Room temperature 2DEG carrier density measured by Van Der Pauw method of SiN/AlN/GaN, lattice matched , and heterostructures as a function of the barrier layer thickness.
Carrier density profile of AlN/GaN-on Si HEMT structure. The inset shows the first 10 nm of the carrier profile indicating a sharp carrier confinement and high polarization at the AlN/GaN interface.
circular diode characteristic of 3 nm barrier thickness AlN/GaN-on Si HEMT structure revealing a low leakage current up to 200 V reverse bias.
Transfer characteristics of the SiN/AlN/GaN HEMT on silicon substrate, demonstrating a record extrinsic transconductance of GaN-on-Si HEMTs.
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