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An observation of charge trapping phenomena in structure
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10.1063/1.3596382
/content/aip/journal/apl/98/22/10.1063/1.3596382
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3596382
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional HR-TEM image of structure after annealing at for 30s in air ambient. (b) Cross-sectional magnified HR-TEM image of layer. (c) EDS spectrum of annealed sample. The inset is the HR-XRD double axis profile of heterostructure.

Image of FIG. 2.
FIG. 2.

(a) High frequency (1 MHz) capacitance vs gate voltage (C-V) characteristics of control, as-deposited and annealed devices. Decrease in capacitance for as-deposited and annealed devices is due to the oxide capacitance. C-V characteristics of (b) as-deposited (c) annealed devices with different positive programming pulse. (d) C-V curve of annealed device with varying frequency from 500 KHz to 500 Hz.

Image of FIG. 3.
FIG. 3.

(a) Schematic band diagram of MOS structure. (b) Current density (J) vs gate voltage (V) characteristic of annealed device with reverse and forward bias.

Image of FIG. 4.
FIG. 4.

Room temperature (a) retention (b) endurance characteristics of the annealed device.

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/content/aip/journal/apl/98/22/10.1063/1.3596382
2011-06-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/22/10.1063/1.3596382
10.1063/1.3596382
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