Full text loading...
Schematics of QD laser heterostructure grown by plasma-assisted MBE. Insets show AFM image of an uncapped self-organized InGaN/GaN QD layer and room temperature PL spectrum from five layers of QDs and (b) calculated gain spectra of QDs for different injection current densities.
(a) Scanning electron microscope image of laser facet after FIB etching with a gallium beam current of 20 nA; (b)–(d) are image of facets after subsequent FIB etching with beam currents of 300, 30, and 3pA.
(a) Light-current-voltage characteristics of QD laser measured in the pulsed bias mode at ; (b) electroluminescence spectra of QD laser below (with dc bias) and above (with pulsed bias) threshold. Inset shows measured variation in spectral output peak wavelength with injection current; and (c) variation in threshold current density with temperature.
Article metrics loading...