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(a) Schematic illustration of designed Au–MgZnO/ZnO photodetectors with MSM structure, the electrode fingers are wide and long with a spacing gap, (b) cross-section of the photodetector, (c) calculated potential contours of the photodetector with MgZnO, and (d) calculated potential contours of the photodetector with MgZnO. Simulations of the potential distribution in the region enclosed by the dashed line in (b) are performed using the APSYS software. In the simulation, the carrier concentration of ZnO and MgZnO are and , Schottky barrier of the contact is 0.5 eV, and applied voltage is 10 V.
(a) Cross-sectional SEM image of MgZnO/ZnO heterostructure, and the inset shows that of the MgZnO grown on quartz substrate, (b) XRD angular scan of MgZnO/ZnO heterostructure, and the inset shows the AFM image of the MgZnO surface.
I-V characteristic of the SBPD measured in dark, the inset shows current density.
(a) Spectral response of the photodetectors with 2 and thick MgZnO under 10 V bias, (b) maximum responsivity vs bias voltage of the SBPD with thick MgZnO.
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