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Rise and fall of defect induced ferromagnetism in SiC single crystals
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Image of FIG. 1.
FIG. 1.

(a) Ferromagnetic hysteresis loops recorded at 5 or 300 K for sample 1X14. The magnetization M was related to a thin layer of 460 nm thickness. The 5 K as-measured loops without subtracting the diamagnetic background are shown in the inset. The magnetization M was related to the whole sample weight. (b) Evolution of the saturation magnetization with the dpa. (c) Raman spectra for virgin and implanted 6H–SiC single crystals. (d) shows the relative intensity variation in the FLO mode marked in (c) along with the dpa. (e) S-parameter depending on positron implantation energy and fluence implanted. Since the positron implantation profile corresponds to a broad Makhov-type distribution (Ref. 12), it probes defects also with the distribution tails, i.e., the mean positron implantation depth does not correspond directly to the geometric depth of the sample. (f) Dependence of the S-parameter (with respect to the bulk value ) as well as the estimated number N (agglomerated) of on the divacancies in the cluster on the dpa.


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Table I.

Sample identifiers, ion energy, ion fluences, and maximum dpa of 6H–SiC single crystals implanted with ions.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rise and fall of defect induced ferromagnetism in SiC single crystals