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(a) Schematic illustration of depletion-type inverter composed of two GTZO TFTs with transparent ITO S/D electrode: driver with semitransparent and load with Al gate. (b) Photogating measurement under blue LED (left) and the photograph of our device (right) on glass substrate, which was placed on a star logo paper. Dotted line contours express the transparent ITO S/D in our TFTs. (c) Energy band diagrams of gate electrode (, Al) /dielectric/GTZO structure in equilibrium state.
(a) Transfer characteristics of top-gate GTZO-TFTs with and Al gate electrodes. The difference due to the different gate metal is clearly shown from the transfer curves. (b) Static VTC of our depletion-load-type inverter as measured at the low supply voltages of 3 and 5 V. Inverter dynamics were also shown in the inset, obtained at 5 V .
(a) Photoinduced transfer curves of our driver TFT with gate, obtained at a of 5 V by illuminating 2 mW red, green, blue, and 0.2 mW UV lights onto the semitransparent gate. Inset is an optical absorption spectrum of GTZO active layer. (b) Trap DOS profiles of driver TFT with gate. Inset is a schematic energy band diagram which elucidates the photoexcitation phenomena in GTZO-TFT.
Static VTC show photogating inverter operation when the light is illuminated on the gate of driver TFT. The VTC curve was more shifted to the left-side with higher energy photons. Inset shows dynamic photogating of our inverter at 1 V under blue and green LEDs.
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