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Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode
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Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of depletion-type inverter composed of two GTZO TFTs with transparent ITO S/D electrode: driver with semitransparent and load with Al gate. (b) Photogating measurement under blue LED (left) and the photograph of our device (right) on glass substrate, which was placed on a star logo paper. Dotted line contours express the transparent ITO S/D in our TFTs. (c) Energy band diagrams of gate electrode (, Al) /dielectric/GTZO structure in equilibrium state.

Image of FIG. 2.
FIG. 2.

(a) Transfer characteristics of top-gate GTZO-TFTs with and Al gate electrodes. The difference due to the different gate metal is clearly shown from the transfer curves. (b) Static VTC of our depletion-load-type inverter as measured at the low supply voltages of 3 and 5 V. Inverter dynamics were also shown in the inset, obtained at 5 V .

Image of FIG. 3.
FIG. 3.

(a) Photoinduced transfer curves of our driver TFT with gate, obtained at a of 5 V by illuminating 2 mW red, green, blue, and 0.2 mW UV lights onto the semitransparent gate. Inset is an optical absorption spectrum of GTZO active layer. (b) Trap DOS profiles of driver TFT with gate. Inset is a schematic energy band diagram which elucidates the photoexcitation phenomena in GTZO-TFT.

Image of FIG. 4.
FIG. 4.

Static VTC show photogating inverter operation when the light is illuminated on the gate of driver TFT. The VTC curve was more shifted to the left-side with higher energy photons. Inset shows dynamic photogating of our inverter at 1 V under blue and green LEDs.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode