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CER spectra of GaN(3nm)/AlGaN(d)/GaN(buffer) heterostructures with (a) 30, (b) 20, and (c) 10 nm thick AlGaN layer.
Analysis of AlGaN-related FKO for GaN(3 nm)/AlGaN(, 20, 30 nm)/GaN(buffer) heterostructures.
Calculated distribution of built-in electric field in GaN(3 nm)/AlGaN(20 nm)/GaN(buffer) heterostructure for different Fermi-level position on GaN cap surface (a) and inside GaN buffer layer (b).
Comparison of experimental data (horizontal dashed line) and theoretical calculations of built-in electric field in AlGaN layer performed for various positions of Fermi-level on the GaN surface for heterostructures with (a) 30, (b) 20, and (c) 10 nm thick AlGaN layer. The Fermi-level in GaN buffer layer was assumed to be located 1.6 eV below the conduction band in the distance of 50 nm from the AlGaN/GaN(buffer) interface.
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