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Suppression of in-plane tunneling anisotropic magnetoresistance effect in -GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier
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10.1063/1.3595311
/content/aip/journal/apl/98/23/10.1063/1.3595311
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3595311
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns along the azimuths of and for CMS/GaAs and CMS/MgO/GaAs. (a) CMS/GaAs with , (b) CMS/GaAs with , (c) CMS/MgO/GaAs with , and (d) CMS/MgO/GaAs with .

Image of FIG. 2.
FIG. 2.

(a) Current-voltage characteristics of a -GaAs Schottky tunnel junction measured at 4.2 K. The inset shows a circuit configuration for three-terminal geometry. (b) RA products of CMS/MgO/n-GaAs single junctions at RT as a function of MgO thickness. The inset shows schematic band diagrams of CMS/n-GaAs junctions with and without a MgO barrier.

Image of FIG. 3.
FIG. 3.

MR curves measured at 4.2 K for CMS/MgO/n-GaAs single junctions with (a) no MgO layer and (b) of 0.6 nm, and those for CoFe/MgO/n-GaAs single junctions with (c) no MgO layer and (d) of 0.8 nm. An in-plane magnetic field was applied along (a) [110], (b) [110], [100], and , (c) [110], and (d) [110], [100], and , of GaAs, respectively. The MR curves are offset for clarity in [(b) and (d)].

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/content/aip/journal/apl/98/23/10.1063/1.3595311
2011-06-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3595311
10.1063/1.3595311
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