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RHEED patterns along the azimuths of and for CMS/GaAs and CMS/MgO/GaAs. (a) CMS/GaAs with , (b) CMS/GaAs with , (c) CMS/MgO/GaAs with , and (d) CMS/MgO/GaAs with .
(a) Current-voltage characteristics of a -GaAs Schottky tunnel junction measured at 4.2 K. The inset shows a circuit configuration for three-terminal geometry. (b) RA products of CMS/MgO/n-GaAs single junctions at RT as a function of MgO thickness. The inset shows schematic band diagrams of CMS/n-GaAs junctions with and without a MgO barrier.
MR curves measured at 4.2 K for CMS/MgO/n-GaAs single junctions with (a) no MgO layer and (b) of 0.6 nm, and those for CoFe/MgO/n-GaAs single junctions with (c) no MgO layer and (d) of 0.8 nm. An in-plane magnetic field was applied along (a) , (b) , , and , (c) , and (d) , , and , of GaAs, respectively. The MR curves are offset for clarity in [(b) and (d)].
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