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Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy
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10.1063/1.3596443
/content/aip/journal/apl/98/23/10.1063/1.3596443
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3596443
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A typical cross-sectional FIB image of TSV with diameter.

Image of FIG. 2.
FIG. 2.

Evolution of Raman shifts and stress of TSV arrays with (a) diameter and (b) diameter undergoing an annealing experiment under the excitation source of three wavelengths (514.5, 488.0, and 457.9 nm).

Image of FIG. 3.
FIG. 3.

Cross-sectional stresses in the region between a center of TSVs for the and diameter before (thick lines) and after (full symbols) thermal annealing step along (a) the axial and (b) diagonal direction.

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/content/aip/journal/apl/98/23/10.1063/1.3596443
2011-06-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3596443
10.1063/1.3596443
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