No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Stress evolution in surrounding silicon of Cu-filled through-silicon via undergoing thermal annealing by multiwavelength micro-Raman spectroscopy
2.S. E. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C. H. Jan, C. Kenyon, J. Klaus, K. Kuhn, M. Zhiyong, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, N. Phi, S. Sivakumar, R. Shaheed, L. Shifren, B. Tufts, S. Tyagi, M. Bohr, and Y. El-Mansy, IEEE Trans. Electron Devices 51, 1790 (2004).
3.A. Armigliato, R. Balboni, I. De Wolf, S. Frabboni, K. G. F. Janssens, and J. Vanhellemont, Inst. Phys. Conf. Ser. 134, 229 (1993).
Article metrics loading...
Full text loading...
Most read this month