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(a) HX-PES at the take of angle (TOA) of 2° (solid line) and Al-XPS at the TOA of 0° (dashed line) for core-level. (b) Measured TOA dependence of for UID by HX-PES (open marks) and Al-XPS (solid marks). The inset schematically shows the measurement geometry. (c) Valence band photoemission spectra for UID measured by HX-PES at the TOA of 2° and Al-XPS at the TOA of 0°. The Fermi level corresponds to 0 eV.
(a) Dopant concentration dependence of resistivity (: solid marks) and carrier concentration (N) as measured by the Hall effect (open marks) of UID—(circles), Sb—(squares), and In—(triangles) doped films. (b) characteristics determined for UID and In-doped films with Au contacts. For plotting purposes the current density of the UID and highly In-doped samples has been scaled by factors given in the legend.
Dopant concentration dependence of (a) the energy difference of the Sn3d to the Fermi level and (b) the CBF intensity normalized using the peak around 11.5 eV corresponding to and for UID—(circles), Sb—(squares), and In—(triangles) doped films. Open and solid marks show the results measured by Al-XPS and HX-PES, respectively.
(a) Measured TOA dependence of for UID—(circles), Sb—(squares), and In—(triangles) doped films. (b) Schematic illustration of the corresponding real space band diagrams from surface (left) to bulk (right) for Sb-doped, UID, and In-doped films. : Fermi level of , : conduction band, : valence band, : band gap.
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