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Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system
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10.1063/1.3596467
/content/aip/journal/apl/98/23/10.1063/1.3596467
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3596467

Figures

Image of FIG. 1.
FIG. 1.

Experimental setup. The sample plane lies in the plane and the plane is always the plane of incidence. and are the and components of the current respectively. is the angle of incidence between the incident light and the axis. is the azimuth angle, which is between the orientation of QWRs and axis. Any component of the current (the index refers either or with respect to the coordinate system) is calculated using the formula , where is the electric potential difference between the two measured contacts, is the load resistance with a value of .

Image of FIG. 2.
FIG. 2.

Resistance (a) and photoconductivity (b) of the samples as a function of the azimuth angle . The squares, circles, and triangles stand for the experimental data of the sample with 2 ML, 4 ML, and 6 ML thickness of QWR layer, respectively.

Image of FIG. 3.
FIG. 3.

CPGE current (see Fig. 1 for the definition of the coordinate) with QWR layer thickness; (a) 6 ML, (b) 4 ML, (c) 2 ML as a function of azimuth angle . The solid lines are the fitting curves. The angle of incidence is 30°.

Tables

Generic image for table
Table I.

Ratio of Rashba and Dresselhaus terms.

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/content/aip/journal/apl/98/23/10.1063/1.3596467
2011-06-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3596467
10.1063/1.3596467
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