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Ultrathin -Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
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10.1063/1.3596702
/content/aip/journal/apl/98/23/10.1063/1.3596702
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3596702
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Figures

Image of FIG. 1.
FIG. 1.

(a) emissions from (top) and pure (center) after air exposure and annealing in vacuum, and from pure before air exposure (bottom). (b) emissions from (bottom and top) and (center) after air exposure and annealing at different temperatures. (c) LEED (120 eV) from after 1 h air exposure and 0.5 h annealing at , showing a clear pattern. (d) LEED (57 eV) from after 1 h air exposure and 0.5 h annealing at , showing a clear pattern. (e) LEED (55 eV) from after 1 h air exposure and 0.5 h annealing at , showing a clear pattern.

Image of FIG. 2.
FIG. 2.

, , and photoemissions from (a) before air exposure, (b) after air exposure, and [(c) and (d)] after heating of the air-exposed sample at and , respectively. The spectra were fitted with the minimum number of components. represents InAs bulk components; different components are surface-related. spectra were aligned with bulk components.

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/content/aip/journal/apl/98/23/10.1063/1.3596702
2011-06-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3596702
10.1063/1.3596702
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