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Schematic conduction band diagram and moduli squared of the relevant wave functions of injector/active/injector parts in the active region. An electric field of 58 kV/cm was applied to align the structure. The strain-balanced layer sequence of one period of the active layers, in angstroms, starting from the injection barrier (toward the right side) is as follows: 37/24/26/60/9/49/11/44/13/35/15/32/16/30/18/29/21/28/24/27/28/26 where InAlAs barrier layers are in bold, InGaAs QW layers in roman, and doped layers (Si, ) are underlined.
Intersubband EL spectra of the mesa device for various voltages at 300 K. The inset shows the FWHM of the spectra as a function of voltage.
(a) cw current-light output (I-L) characteristics of the wide, 3 mm long, HR-coated, buried heterostructure laser with a thick gold film at different heat sink temperatures. The voltage-current characteristics at 280 and 370 K are also shown. The inset shows the I-L characteristic in pulsed mode at a duty cycle of 1.0% at 300 K. (b) Temperature-dependent threshold current densities for pulsed and cw modes for the wide, 3 mm long, episide down bonded and wide, 4 mm long, episide up bonded lasers. The both dashed curves represent fits by the empirical exponential functions, .
The subthreshold amplified spontaneous emission and lasing spectra of the 3 mm long, wide, HR-coated, buried heterostructure laser in cw at 300 K at different currents. The inset shows lasing spectra in pulsed mode (100 kHz, 100 ns) at 300 K at different currents.
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