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Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination
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10.1063/1.3597299
/content/aip/journal/apl/98/23/10.1063/1.3597299
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3597299
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Figures

Image of FIG. 1.
FIG. 1.

(a) The measured transfer curves of the TFTs before, during, and after light illumination at a constant power intensity . The inset shows the change in the SS under light illumination . (b) Variations in the values as a function of measured in a MIS capacitor. The inset shows the schematic cross-sectional view of the fabricated MIS capacitor.

Image of FIG. 2.
FIG. 2.

(a) Change in the increase in and number of defect transition generated electrons under light illumination . (b) Schematic illustrations of the creation of states and the photoexcitation of electrons from and VB tail states under light illumination .

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/content/aip/journal/apl/98/23/10.1063/1.3597299
2011-06-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/23/10.1063/1.3597299
10.1063/1.3597299
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