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(a) Comparison of SIMS depth profiles of boron of samples that had and had not been coimplanted with carbon after annealing. The as-implanted samples that had and had not been coimplanted with carbon have the same boron SIMS profiles. Linear-scale SIMS concentration profiles of (b) boron and (c) carbon in boron and carbon coimplanted samples reveal the changes in the shape in high concentration regions. APT maps of boron and carbon in coimplanted samples (d) before and (e) after annealing [the depth scale is the same as those in (a)–(c)]. Projected cross-sectional APT maps for depths between 30 and 40 nm below the silicon surface are also shown (right).
(a) Carbon and boron clusters determined by the maximum separation method in boron and carbon coimplanted samples after annealing. Carbon clusters consisting of more than six carbon atoms with a carbon–carbon distance of less than 1.5 nm and boron clusters consisting of more than five atoms with a boron–boron distance of less than 2.5 nm are shown. (b) Boron clusters for the same cluster analysis conditions are shown for reference.
Radial distribution functions at the center of a volume around the high boron concentration region before and after annealing. (a) Carbon and (b) boron concentrations in boron and carbon coimplanted sample.
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