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Schematic view of the LT-sNSOM.
(a) Scanning electron microscopy (SEM) picture of a typical mid-IR PhC QC laser, and corresponding schematic device cross-section. The InP substrate is typically -thick while the active-region is -thick. (b) curves measured in pulsed mode for the mid-IR PhC QC laser studied in this letter. The measurements at different heat-sink temperatures have been performed using 50 ns pulse widths at 84 kHz repetition rate. (c) SEM picture of a typical THz PhC QC laser, and corresponding schematic cross section. The PhC resonator is based on a square lattice design, and it comprises 12 photonic lattice periods. (d) curves, at several heat-sink temperatures, measured in pulsed mode for the THz PhC QC laser studied in this letter. The measurements have been acquired using 333 ns pulse widths at a repetition rate of 33 kHz.
Images recorded at low temperature with the LT-sNSOM on a mid-IR and a THz PhC QC laser. (a) Topography image showing the PhC on the top electrode of a mid-IR PhC laser, and (b) corresponding near-field optical images recorded at 115 K. (c) Near-field optical image recorded at 160 K on the same device. (d) Topography image recorded near the center of the top electrode of a THz PhC laser, and (e) corresponding near-field optical image recorded at 106 K. (f) Near-field image at 106 K recorded around a hole of the THz PhC laser.
(a) Electric field component orthogonal to the layers taken in a plane located 150 nm above the mid-IR device surface. The calculation is 3D and simulates an infinitely periodic structure. The dashed circles correspond to the edge of the air-holes in the top metallization. (Color online) (b) Distribution of in the x-z section perpendicular to the PhC layer and across the centers of the air holes. [(c) and (d)] same calculations for the THz device.
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